Few-layer MoS2as nitrogen protective barrier
نویسندگان
چکیده
منابع مشابه
Few-layer HfS2 transistors
HfS2 is the novel transition metal dichalcogenide, which has not been experimentally investigated as the material for electron devices. As per the theoretical calculations, HfS2 has the potential for well-balanced mobility (1,800 cm(2)/V·s) and bandgap (1.2 eV) and hence it can be a good candidate for realizing low-power devices. In this paper, the fundamental properties of few-layer HfS2 flake...
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ژورنال
عنوان ژورنال: Nanotechnology
سال: 2017
ISSN: 0957-4484,1361-6528
DOI: 10.1088/1361-6528/aa825e